Amorphous Semiconductors
Mostrando 1-12 de 17 artigos, teses e dissertações.
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1. Spectroscopic study of molecular dynamics and packing in organic semiconductors / Estudo espectroscópico da dinâmica molecular e empacotamento em semicondutores orgânicos
In this dissertation we present a study of the molecular dynamics and packing in organics semiconductor with different conjugated chains lengths using a of multi-techniques approach, in particular, Nuclear Magnetic Resonance (NMR), Wide Angle X-ray Scattering (WAXS), Differential Scanning Calorimetry (DSC), Raman spectroscopy, UV-Vis absorption and fluoresce
IBICT - Instituto Brasileiro de Informação em Ciência e Tecnologia. Publicado em: 22/07/2011
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2. Síntese e caracterização de filmes à base de Si e Ge dopados com espécies magnéticas / Synthesis and characterization of Si and Ge based films doped with magnetic species
Along the last few years, the doping of semiconductors (either II-VI, IV-VI, III-V, and group-IV compounds) with magnetic species have been extensively studied due to their potential applications in spintronics. Among them, Si- and Ge-based magnetic semiconductors are very attractive because of their total compatibility with the well-established current semi
Publicado em: 2010
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3. In-situ raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal
Mechanical material removal during ultraprecision machining of semiconductors crystals normally induces surface damage. In this article, Raman micro-spectroscopy has been used to probe structural alteration as well as residual stresses in the machined surface generated by single point diamond turning. The damage found is characterized by an amorphous phase i
Journal of the Brazilian Society of Mechanical Sciences and Engineering. Publicado em: 2007-03
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4. Studies of the magnetic properties on Mn-doped GaAs and Zn1-xCoxO thin films / Estudos das propriedades magneticas dos filmes finos de GaAs diopado com Mn e de Zn1-xCoxO
Ferromagnetic semiconductors (FM) are compounds of technological interest due to the possibility of combining their charge and spin degrees of freedom when producing electronic devices. In particular, semiconductor thin films doped with transition metal have become focus of intense scientific investigation since ferromagnetism with reasonably high Curie temp
Publicado em: 2007
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5. Estudo da morfologia e estrutura de filmes de oxinitreto de silício (SiOxNy) obtidos pela técnica de PECVD. / Morphological and structural studies of silicon oxynitride films (SiOxNy) obtained by PECVD technique.
Neste trabalho são apresentados resultados da caracterização estrutural e morfológica de filmes de oxinitreto de silício (SiOxNy) depositados pela técnica de deposição química a vapor assistida por plasma (PECVD) a baixa temperatura (320°C). O objetivo deste trabalho é relacionar a composição química de ligas amorfas de SiOxNy com suas propried
Publicado em: 2007
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6. Study of the viability of production of semiconductors devices based on silicon carbide films grown by PECVD. / Estudo da viabilidade de fabricação de dispositivos semicondutores baseados em filmes de carbeto de silício crescidos por PECVD.
In this work we studied the viability to build devices based on stoichiometric amorphous silicon carbide semiconductor films (a-Si0.5C0.5:H), obtained by plasma enhanced chemical vapor deposition technique. The project proposal involves the realization of a series of studies that evaluate the potentialities of the a-SiC:H for the fabrication of simple semico
Publicado em: 2006
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7. Fabricação de novas heteroestruturas a partir de estruturas SOI obtidas pela técnica smart-cut. / New semiconductor heterostructures based on SOI structures obtained by "smart-cut" process.
In this work we study new semiconductors heterostructures, based on SOI (Silicon-On- Insulator) structures obtained by "Smart-Cut" process, that were studied in the last years at Departamento de Engenharia de Sistemas Eletrônicos da Escola Politécnica da Universidade de São Paulo (EPUSP). This technique combines high-dose hydrogen ion implantation (I/I) a
Publicado em: 2006
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8. Photoluminescence properties of Te doped AlGaAsSb alloys
A detailed study of the photoluminescence properties in undoped and Te-doped AlGaAsSb alloys lattice matched to InP is presented. Photoluminescent temperature and excitation intensity dependences are employed to discuss the origin of the dominant transition and the influence of the presence of Al and Te on the fluctuation of the electrostatic potential in th
Brazilian Journal of Physics. Publicado em: 2005-12
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9. Ressonancia paramagnetica do spin eletronico em nitretos de carbono amorfo / Electron spin resonance on amorphous carbon nitrides
Neste projeto de tese de mestrado apresentamos os resultados de medidas de ressonância paramagnética eletrônica (RPE), realizadas em filmes de nitreto de carbono amorfo (a-C1-xNx(:H)), depositados por duas técnicas diferentes, conhecidas como: Glow Discharge (GD) e Dual Ion Beam Assisted Deposition (DIBAD). Os principais parâmetros obtidos como: A conce
Publicado em: 2005
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10. Estudo das propriedades termomecanicas e estruturais de filmes finos amorfos de carbono e nitretos de carbono / Study of the thermomechanical and structural properties in amorphous carbon and carbon nitride
In this work, we studied thenno mechanical and structural properties of hydrogenated amorphous carbon (a-C: H), hydrogenated carbon nitride (a-C:H:Nx) and carbon nitride (a-C:Nx) thin films. Two techniques were used to prepare the samples: glow discharge for depositing hydrogenated amorphous carbon (a-C:H) and carbon nitride (a-C:H:Nx) and ion beam assisting
Publicado em: 2004
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11. Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering
This paper addresses the doping mechanism of amorphous semiconductors through the investigation of boron doped rf co-sputtered amorphous hydrogenated silicon. The activation energy and room temperature conductivity varied from 0.9 to 0.3 eV and from 10-12 to 10-4 Ohm-1 .cm-1, respectively, by ranging the boron concentration from 0 to 3 at.%. These ranges of
Brazilian Journal of Physics. Publicado em: 2002-06
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12. Bismuth doping of hydrogenated amorphous germanium
t: The addition of small quantities of bismuth to hydrogenated amorphous germanium (a-Ge:H), changed its electrical conductivity and bandgap. Detailed data were obtained from measurements of electrical conductivity, optical and infrared transrnission, and from photothermal deflection spectroscopy. Films of a-Ge:H having Bi atomic concentrations ranging betwe
Publicado em: 1998