Indium tin oxide synthesized by a low cost route as SEGFET pH sensor
AUTOR(ES)
Vieira, Nirton Cristi Silva, Fernandes, Edson Giuliani Ramos, Queiroz, Alvaro Antonio Alencar de, Guimarães, Francisco Eduardo Gontijo, Zucolotto, Valtencir
FONTE
Mat. Res.
DATA DE PUBLICAÇÃO
02/07/2013
RESUMO
Polycrystalline ITO films with good optoelectronics characteristics and homogeneous surface has been obtained upon annealing at 550 °C in N² atmosphere using a low-cost chemical vapor deposition (CVD) system. The films were evaluated as pH sensors in separative extended gate field-effect transistor (SEGFET) apparatus, exhibiting a sensitivity of 53 mV/pH, close to the expected Nernstian theoretical value for ion sensitive materials. The use of CVD process to synthesize ITO, as described here, may represent an alternative for fabrication of SEGFET pH sensors at low cost to be used in disposable biosensors since H+ ions are the product of several oxireductase enzymes.
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