High sensitivity ethanol gas sensor based on Sn - doped ZnO under visible light irradiation at low temperature
AUTOR(ES)
Zhang, Peishuo, Pan, Guofeng, Zhang, Bingqiang, Zhen, Jiali, Sun, Yicai
FONTE
Mat. Res.
DATA DE PUBLICAÇÃO
22/07/2014
RESUMO
Pure ZnO and 5at%, 7at%, 9at% Sn - doped ZnO materials are prepared by the chemical co - precipitation method. They were annealed by furnace at temperature range of 300 - 700ºC in air for 1h. The ZnO materials are characterized by X - ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the Sn - doped ZnO materials appear rough porous structures. The maximum sensitivity can be achieved by doping the amount of 7 at%. It has much better sensing performance towards ethanol vapor under visible light irradiation. The response and recovery time are ~1s and ~5s, respectively. The mechanism for the improvement in the sensing properties can be explained with the surface adsorption theory and the photoactivation theory.
Documentos Relacionados
- Effect of initialization time on application potentiality of a ZnO thin film based LPG sensor
- Oxygen diffusion in pure and doped ZnO
- Oxygen diffusion in Bi2O3-doped ZnO
- Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates
- Nanoparticles of ZnO Doped With Mn: Structural and Morphological Characteristics