Estudo das propriedades opto-eletrônicas de micro-cristais de rubi / Study of opto-electronics properties of ruby micro-crystals

AUTOR(ES)
DATA DE PUBLICAÇÃO

2010

RESUMO

Films of amorphous aluminum-nitride (AlN) were prepared by conventional radio frequency sputtering of an Al+Cr target in a plasma of pure nitrogen. The Cr-to-Al relative area determines the chromium content, which stayed in the ~ 0 3.33 at.% concentration range in the present study. Film deposition was followed by thermal annealing the samples up to 1050 ºC and by spectroscopic characterization through energy dispersive spectrometry (EDS), Photo-luminescence and Optical Transmission measurements. According to the experimental results, the optical-electronic properties of the Cr-containing AlN films are highly influenced by both the Cr concentration and the temperature of the thermal treatments. In fact, thermal annealing at 1050 °C induces the development of structures which, because of their typical size and unique spectral characteristics, were designated by ruby microstructures (RbMSs). These RbMSs are surrounded by a nitrogen-rich environment in which Cr3+ ions exhibit luminescent features with no counterpart in the literature. The light emission presented by the RbMSs and surroundings were investigated according to the Cr content and temperature of measurement allowing the identification of several Cr3+-related luminescent lines. The main characteristics of these luminescent lines and corresponding excitation-recombination processes are presented and discussed in view of a detailed spectroscopic analysis.

ASSUNTO(S)

ruby microstructures optical properties al2o3:cr3+ thin films luminescent materials micro-estruturas de rubi materiais luminescentes al2o3:cr3+ filmes finos propriedades ópticas

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